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KRN002N05T306
KRN002N05T306
Type N channel Drain-source voltage (Vdss) 60V Continuous drain current (Id) 300mA Power (Pd) 350mW On resistance (RDS(on)@Vgs,Id) 2Ω 10V,500mA Threshold voltage (Vgs(th)@Id) 2.5V 250uA Gate charge (Qg@Vgs) 400pC 4.5V Input capacitance (Ciss@Vds) 30pF 25V Reverse transfer capacitance (Crss@Vds) 2.5pF 25V Working temperature (minimum) -55℃ (Tj) Working temperature (maximum) +150℃ (Tj)
Specifications: KRN semiconductor technology (Shenzhen) Co., Ltd

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