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KRNBAV70
KRNBAV70
Specifications: KRN semiconductor technology (Shenzhen) Co., Ltd

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Product details

Product catalog Switching diodes
Working temperature (maximum) +150℃ (Tj)
Power 225mW
Operating temperature (minimum)-
Reverse recovery time (trr) 6ns
Forward voltage drop (Vf) 1.25V 150mA
Average rectified current (Io) 200mA
Diode configuration 1 pair of common cathode
DC reverse withstand voltage (Vr) 70V
Reverse current (Ir) 2.5μA 70V