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KRN3911DV
KRN3911DV
Specifications: KRN semiconductor technology (Shenzhen) Co., Ltd

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Product details

Product catalog MOSFET
Threshold voltage (Vgs(th)@Id) 2V 250μA
Power (Pd) 1.4W
On resistance (RDS(on)@Vgs,Id) 75mΩ 2.5A, 4.5V
Drain-source voltage (Vdss) 20V
Type 2 P-channel
Continuous drain current (Id) 4A